?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet superfet tm july 2006 fcd5n60 / FCU5N60 600v n-channel mosfet features ?650v @t j = 150c ? typ. rds(on)=0.81 ? ? ultra low gate charge (typ. qg=16nc) ? low effective output capacitance (typ. coss.eff=32pf) ? 100% avalanche tested description superfet tm is, farichild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conversion in switching mode operation for system miniaturization and higher efficiency. d-pak fcd series g s d gs d i-pak fcu series d g s absolute maximum ratings symbol parameter fcd5n60 / FCU5N60 unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 4.6 2.9 a a i dm drain current - pulsed (note 1) 13.8 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 2.9 mj i ar avalanche current (note 1) 4.6 a e ar repetitive avalanche energy (note 1) 5.4 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 54 0.43 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter fcd5n60/FCU5N60 unit r jc thermal resistance, junction-to-case 2.3 c/w r ja thermal resistance, junction-to-ambient 83 c/w *drain current limited by maximum junction temperature
2 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fcd5n60 fcd5n60tm d-pak 380mm 16mm 2500 fcd5n60 fcd5n60tf d-pak 380mm 16mm 2000 FCU5N60 FCU5N60 i-pak -- -- 70 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0v, i d = 250 a, t j = 150 c -- 650 -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.6 -- v/ c bv ds drain-source avalanche breakdown voltage v gs = 0v, i d = 4.6a -- 700 -- v i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 2.3a -- 0.81 0.95 ? g fs forward transconductance v ds = 40v, i d = 2.3a (note 4) -- 3.8 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 470 600 pf c oss output capacitance -- 250 320 pf c rss reverse transfer capacitance -- 22 -- pf c oss output capacitance v ds = 480v, v gs = 0v, f = 1.0mhz -- 12 -- pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 32 -- pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 4.6a r g = 25 ? (note 4, 5) -- 12 30 ns t r turn-on rise time -- 40 90 ns t d(off) turn-off delay time -- 47 95 ns t f turn-off fall time -- 22 55 ns q g total gate charge v ds = 480v, i d = 4.6a v gs = 10v (note 4, 5) -- 16 -- nc q gs gate-source charge -- 2.8 -- nc q gd gate-drain charge -- 7 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 4.6 a i sm maximum pulsed drain-source diode forward current -- -- 13.8 a v sd drain-source diode forward voltage v gs = 0v, i s = 4.6a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 4.6a di f /dt =100a/ s (note 4) -- 295 -- ns q rr reverse recovery charge -- 2.7 -- c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 2.3a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 4.6a, di/dt 1200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 246810 10 -1 10 0 10 1 * note 1. v ds = 40v 2. 250 p s pulse test -55 o c 150 o c 25 o c i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 p s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 * note 1. v ds = 40v 2. 250 p s pulse test -55 o c 150 o c 25 o c i d , drain current [a] v gs , gate-source voltage [v] 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 051015 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 4.6a v gs , gate-source voltage [v] q g , total gate charge [ o c] 10 0 10 1 0 500 1000 1500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10v 2. i d = 2.3a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s 100 ms operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 p s * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n o te s : 1 . z t jc (t) = 2.3 o c/w max. 2 . d u ty f a c to r, d = t 1 /t 2 3 . t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , s q u a re w a v e p u ls e d u ra tio n [s e c ] t 1 p dm t 2
5 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet mechanical dimensions d-pak dimensions in millimeters
8 www.fairchildsemi.com fcd5n60/FCU5N60 rev. a0 fcd5n60/FCU5N60 600v n-channel mosfet package dimensions (continued) i-pak dimensions in millimeters
9 www.fairchildsemi.com fcd5n60/FCU5N60 600v n-channel mosfet fcd5n60/FCU5N60 rev. a0 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make chang es without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liabil ity arising out of the application or use of any product or circuit described he rein; neither does it convey any lice nse under its patent rights, nor the rights of others. these specification s do not expand the terms of fairchil d?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose fa ilure to perform when properly used in accordance with instructions fo r use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
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